A Process-Parameter-Based Circuit Simulation Model for Ion-Implanted MOSFETs and MESFETs

IEEE Journal of Solid-State Circuits

Volumn 24, Issue 1, 1989, Pages 139-145

  Karmalkar, S ^a   Bhat, K N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; SUBSTRATES--DOPING; TRANSISTORS, FIELD EFFECT;

DOPING PROFILE PARAMETERS; GAUSSIAN CHANNEL DOPING PROFILE; MESFET SIMULATION; SHORT CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024612265     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.16313     Document Type: Article

References (9)

1. S. Karmalkar and K. N. Bhat, “The correct equivalent box representation for the buried layer of BC MOSFET's in terms of the implantation parameters.” IEEE Electron Device Lett., vol. EDL-8, pp. 457-459, Oct. 1987.
2. S. Karmalkar and K. N. Bhat, “A simple C-V method to extract the correct equivalent box and Gaussian representations of the channel doping profile and the flat-band voltage in BC MOSFET's,” to be published in Solid-State Electron.
3. A. B. Bhattacharya et al., “Online extraction of model parameters of a long buried-channel MOSFET,” IEEE Trans. Electron Devices, vol. ED-32, pp. 545-550, Mar. 1985.
4. R. E. Williams and D. W. Shaw, “Graded channel FETs: Improved linearity and noise figure,” IEEE Trans. Electron Devices, vol. ED-25, pp. 600-605, June 1978.
5. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, pp. 457-458.
6. T.-H. Chen and M. S. Shur, “Analytical models of ion-implanted GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-32, pp. 18-27, Jan. 1985.
7. G. W. Taylor et al., “A device model for an ion-implanted MESFET,” IEEE Trans. Electron Devices, vol. ED-26, pp. 172-182, Mar. 1979.
8. D. M. Rogers et al., “Model for the channel-implanted enhancement mode IGFET,” IEEE Trans. Electron Devices, vol. ED-33, pp. 955-964, July 1986.
9. C. Y. Wu et al., “A simple punchthrough voltage model for short-channel MOSFET's with single channel implantation,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1704-1707, Sept. 1985.