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A new field-effect transistor with selectivity doped GaAs/n-Alx;Ga1-x;As heterojunctions
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Mimura, T.1
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Two-dimensional electron gas MESFET structure
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3
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Microwave performance of 0.25 μm gate length high electron mobility transistors
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Mar.
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U. K. Mishra, S. C. Palmateer, P. C. Chao, P. M. Smith, and J. C. M. Hwang, “Microwave performance of 0.25 μm gate length high electron mobility transistors,” IEEE Electron Device Lett., vol. EDL-6, no. 3, pp. 142-145, Mar. 1985.
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Ultra high speed integrated Circuits with selectively doped heterostructure transistors
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(Boston, MA), Oct.
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New device structure for 4Kb HEMT SRAM
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(Boston, MA), Oct.
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S. Kuroda, T. Mimura, M. Suzuki, N. Kobayashi, K. Nishiuchi, A. Shibatomi, and M. Abe, “New device structure for 4Kb HEMT SRAM,” in Tech. Dig. IEEE Gallium Arsenide Integrated Circuit Symp. (Boston, MA), Oct. 1984.
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Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
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D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, June 1982.
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Model for modulation doped field effect transistor
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T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, “Model for modulation doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-3, pp. 338-341, Nov. 1982.
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Drummond, T.J.1
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Analysis of high electron mobility transistors based on a two-dimensional numerical model
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June
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D. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of an idealized high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1092-1102, June 1985.
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Widiger, D.1
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Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's
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Sept.
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J. Y. F. Tang, “Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1817-1823, Sept. 1985.
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Tang, J.Y.F.1
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11
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84939369657
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Two-dimensional numerical models for the high electron mobility transistor
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July
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D. Loret, R. Baets, C. M. Snowden, and W. A. Hughes, “Two-dimensional numerical models for the high electron mobility transistor,” in Proc. Int. Conf. Simulation Semiconductor Devices Processes (Swansea, U.K.), July 1986.
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Loret, D.1
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12
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84939353642
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Computer simulation studies of microwave MESFET's
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Ph.D. dissertation, Dept. Physics, Univ. Surrey, England.
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M. A1 Mudares, “Computer simulation studies of microwave MESFET's,” Ph.D. dissertation, Dept. Physics, Univ. Surrey, England.
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A1 Mudares, M.1
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U. Radaioly and D. K. Ferry, “MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas,” IEEE Trans. Electron Devices, vol. ED-33, no. 5, pp. 677-681, May 1986.
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HEMT characteristics based on a 2D quantum Monte Carlo model
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to be published.
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M. A1 Mudares, D. Loret, and C. M. Snowden, “HEMT characteristics based on a 2D quantum Monte Carlo model,” to be published.
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A1 Mudares, M.1
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15
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Current-voltage and capacitance-voltage characteristics of modulationdoped fieid-effect transistors
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Mar.
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K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, “Current-voltage and capacitance-voltage characteristics of modulationdoped fieid-effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, no. 3, pp. 207-212, Mar. 1983.
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Charge control and geometric magnetotransconductance of a gated AlGaAs/GaAs heterojunction transistor
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Dec.
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J. P. Harrang, R. J. Higgins, R. K. Goodall, R. H. Wallis, P. R. Jay, and P, Delescluse, “Charge control and geometric magnetotransconductance of a gated AlGaAs/GaAs heterojunction transistor,” J. Appl. Phys., vol. 58, no. 11, pp. 4431-4437, Dec. 1985.
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0021204462
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Jan
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K. Lee, M. S. Shur, T. J. Drummond, and H. Morko00E7;, “Parasitic MESFET in (Al, Ga)As/GaAs modulation doped FET's and MODFET characterization,” IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 29-35, Jan 1984.
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84939319207
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Large signal characteristics of inverted high electron mobility transistor
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presented at the 12th Int. Symp. Gallium Arsenide Related Compounds, Karuizawa, Japan, Sept.
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A. J. Hill, P. H. Ladbrooke, S. Ransome, and D. Westwood, “Large signal characteristics of inverted high electron mobility transistor,” presented at the 12th Int. Symp. Gallium Arsenide Related Compounds, Karuizawa, Japan, Sept. 1985.
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Hill, A.J.1
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84939371414
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Progress toward performance limits for MODFET and HBT devices
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P. J. Tasker, L. H. Camnitz, L. M. Lunardi, H. Lee, P. A. Maki, P. Enquist, and L. F. Eastman, “Progress toward performance limits for MODFET and HBT devices,” in Proc. GaAs Related Compounds (Biarritz, France), 1984.
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Tasker, P.J.1
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21
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0142116574
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Transport in modulationdoped structures (Alx;Ga1-x;As/GaAs) and correlations with Monte Carlo calculations (GaAs)
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Aug.
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T. J. Drummond, W. Kopp, H. Morkoç, and M. Keever, “Transport in modulationdoped structures (Alx;Ga1-x;As/GaAs) and correlations with Monte Carlo calculations (GaAs),” Appl. Phys. Lett., vol. 41, no. 3. pp. 277-279, Aug. 1982.
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see also
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K. Inoue, S. Hiyamizu, M. Inayama, and Y. Inuishi, “Analysis of 2D electron transport at a GaAs/AlGaAs interface,” in Proc. 14th Solid State Dev. (Tokyo), 1982; see also
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Inoue, K.1
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Nov.
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M. Harano, Y. Takanashi, and T. Sugeta, “Current-voltage characteristics of an AlGaAs/GaAs heterostructure FET for high gate voltages,” IEEE Electron Device Lett., vol. EDL-5, no. 11, pp. 496-499, Nov. 1984.
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