A Two-Dimensional Self-Consistent Numerical Model for High Electron Mobility Transistor

IEEE Transactions on Electron Devices

Volumn 38, Issue 4, 1991, Pages 852-861

  Ng, Sze Him ^a   Khoie, Rahim ^a   Venkat, R ^a  

^a UNIVERSITY OF NEVADA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONS--TRANSPORT PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON GAS LAYER; HEMT MODEL; NUMERICAL MODEL; QUANTUM WELLS;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026135699     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75215     Document Type: Article

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