Accumulation-Punchthrough Mode of Operation of Buried-Channel MOSFET's

IEEE Electron Device Letters

Volumn 3, Issue 7, 1982, Pages 203-204

  Ratnam, P ^a   Bhattacharyya, A B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0020155315     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1982.25538     Document Type: Article

References (6)

1. R. A. Haken, “Analysis of the deep depletion MOSFET and the use of the dc characteristics for determining bulk channel p-CCD parameters,” Solid State Electronics, vol. 21, p. 753, 1978.
2. Y. A. El-Mansy, “Analysis and characterization ofthe depletion mode IGFET,” IEEE J. Solid State Circuits, SC-15, pp. 331, 1980.
3. Hisashi Hara, “Theoretical analysis of fundamental characteristics of channel-doped MOS transistor,” Electronics and Communications in Japan, vol.55-C, no. 10, p. 99, 1972.
4. L. J. M. Esser and F. L. J. Sangster, “Charge transfer devices,” Hand Book of Semiconductors, T. S. Moss, ed., p. 335, 1981.
5. G. Baccarani, F. Landini, and B. Ricco, “Depletion-mode M.O.S.F.E.T model including a field-dependent surface mobility,” IEEE Proc., vol. 127, pt. I, no. 2, April 1980.
6. A. B. Bhattacharyya and P. Ratnam, “High precision on-line extraction of buried-channel MOSFET parameters,” (to be published).