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Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
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Current-voltage and capacitance-voltage characteristics of Modulation-doped field-effect transistors
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Lee, K.1
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Electron density of the two-dimensional electron gas in modulation doped layers
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Apr.
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K. Lee, M. Shur, T. J. Drummond, and H. Morkoç, “Electron density of the two-dimensional electron gas in modulation doped layers,” J. Appl. Phys., vol. 54, pp. 2093-2096, Apr. 1983.
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Feb.
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May
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Dec.
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June
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H. Hida, T. Itoh, and K. Ohata, “An accurate dc model of 2-DEG FET for implementation on a circuit simulator,” IEEE Electron Device Lett., vol. EDL-7, no. 6, pp. 393-395, June 1986.
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Oct.
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H. Hida, T. Itoh, and K. Ohata, “A novel 2DEGFET model based on the parabolic velocity-field curve approximation,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1580-1586, Oct. 1986.
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Signal and noise properties of gallium arsenide microwave field-effect transistors
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Feb.
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M. W. Pospieszalski, S. Weinreb, P. C. Chao, U. K. Mishra, S. C. Palmateer, P. M. Smith, and J. C. M. Hwang, “Noise parameters and light sensitivity of low-noise high electron-mobility transistors at 300 and 12.5 K,” IEEE Trans. Electron Devices, vol. ED-33, pp. 218-223, Feb. 1986.
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Parasitic MESFET in (AlGa) As/GaAs modulation doped FET's and MODFET characterization
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Jan.
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K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Parasitic MESFET in (AlGa) As/GaAs modulation doped FET's and MODFET characterization,” IEEE Trans. Electron Devices, vol. ED-31, pp. 29-35, Jan. 1984.
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Lee, K.1
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DC and microwave models for AIxGa1_c As/GaAs high electron mobility transistors
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Dec.
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M. H. Weiler and Y. Ayasli, “DC and microwave models for AIxGa1_c As/GaAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1854-1861, Dec. 1984.
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Modulation-doped GaAs/(AlGa) As heterojunction field-effect transistors: MOD-FET's
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June
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T. J. Drummond, W. T. Masselink, and H. Morkoç, “Modulation-doped GaAs/(AlGa) As heterojunction field-effect transistors: MOD-FET's,” Proc. IEEE, vol. 74, no. 6, pp. 773-822, June 1986.
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