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Volumn 34, Issue 9, 1987, Pages 1902-1910

An Analytical DC Model for the Modulation-doped Field-Effect Transistor

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; MICROWAVE DEVICES;

EID: 0023421761     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23174     Document Type: Article
Times cited : (27)

References (19)
  • 1
    • 0020140054 scopus 로고
    • Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
    • June
    • D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, June 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 955-960
    • Delagebeaudeuf, D.1    Linh, N.T.2
  • 2
    • 0020203672 scopus 로고
    • Model for Modulation-doped field effect transistor
    • Nov.
    • T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, “Model for Modulation-doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-3, pp. 338-341, Nov. 1982.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 338-341
    • Drummond, T.J.1    Morkoç, H.2    Lee, K.3    Shur, M.4
  • 3
    • 0020717268 scopus 로고
    • Current-voltage and capacitance-voltage characteristics of Modulation-doped field-effect transistors
    • K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Current-voltage and capacitance-voltage characteristics of Modulation-doped field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, pp. 207-212, Mar. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 207-212
    • Lee, K.1    Shur, M.S.2    Drummond, T.J.3    Morkoç, H.4
  • 4
    • 0020734460 scopus 로고
    • Electron density of the two-dimensional electron gas in modulation doped layers
    • Apr.
    • K. Lee, M. Shur, T. J. Drummond, and H. Morkoç, “Electron density of the two-dimensional electron gas in modulation doped layers,” J. Appl. Phys., vol. 54, pp. 2093-2096, Apr. 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 2093-2096
    • Lee, K.1    Shur, M.2    Drummond, T.J.3    Morkoç, H.4
  • 5
    • 0022012862 scopus 로고
    • Determination of the conduction-band discontinuities of GaAs/AlxGal-xAs interfaces by capacitance-voltage measurements
    • Feb.
    • H. Okumura, S. Misawa, S. Yoshida, and S. Gonda, “Determination of the conduction-band discontinuities of GaAs/AlxGal-xAs interfaces by capacitance-voltage measurements,” Appl. Phys. Lett., vol. 46, no. 4, pp. 377-379, Feb. 1985.
    • (1985) Appl. Phys. Lett. , vol.46 , Issue.4 , pp. 377-379
    • Okumura, H.1    Misawa, S.2    Yoshida, S.3    Gonda, S.4
  • 6
    • 0000819939 scopus 로고
    • Influence of an undoped (AlGa) As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
    • May
    • H. L. Störmer, A. Pinczuk, A. C. Gosaard, and W. Wiegmann, “Influence of an undoped (AlGa) As spacer on mobility enhancement in GaAs-(AlGa)As superlattices,” Appl. Phys. Lett., vol. 39, no. 9, pp. 691-693, May 1981.
    • (1981) Appl. Phys. Lett. , vol.39 , Issue.9 , pp. 691-693
    • Störmer, H.L.1    Pinczuk, A.2    Gosaard, A.C.3    Wiegmann, W.4
  • 7
    • 0000217056 scopus 로고
    • Dependence of electron mobility in Modulation-doped GaAs-(AlGa) As heterojunction interfaces on electron density and A1 concentration
    • Dec.
    • H. L. Störmer, A. C. Gossard, W. Wiegmann, and K. Baldwin, “Dependence of electron mobility in Modulation-doped GaAs-(AlGa) As heterojunction interfaces on electron density and A1 concentration,” Appl. Phys. Lett., vol. 39, no. 11, pp. 912-914, Dec. 1981.
    • (1981) Appl. Phys. Lett. , vol.39 , Issue.11 , pp. 912-914
    • Störmer, H.L.1    Gossard, A.C.2    Wiegmann, W.3    Baldwin, K.4
  • 8
    • 0005280387 scopus 로고
    • Field-dependent mobility analysis of the field effect transistor
    • Nov.
    • F. N. Troffimenkoff, “Field-dependent mobility analysis of the field effect transistor,” Proc. IEEE, vol. 53, no. 11, pp. 1765-1766, Nov. 1965.
    • (1965) Proc. IEEE , vol.53 , Issue.11 , pp. 1765-1766
    • Troffimenkoff, F.N.1
  • 9
    • 0022683226 scopus 로고
    • A MODFET dc-model with improved pinchoff and saturation characteristics
    • May
    • H. Rohdin and P. Roblin, “A MODFET dc-model with improved pinchoff and saturation characteristics,” IEEE Trans. Electron Devices, vol. ED-33, no. 5, pp. 664-672, May 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.5 , pp. 664-672
    • Rohdin, H.1    Roblin, P.2
  • 10
    • 0022739247 scopus 로고
    • An accurate dc model of 2-DEG FET for implementation on a circuit simulator
    • June
    • H. Hida, T. Itoh, and K. Ohata, “An accurate dc model of 2-DEG FET for implementation on a circuit simulator,” IEEE Electron Device Lett., vol. EDL-7, no. 6, pp. 393-395, June 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , Issue.6 , pp. 393-395
    • Hida, H.1    Itoh, T.2    Ohata, K.3
  • 11
    • 3142750401 scopus 로고
    • A novel 2DEGFET model based on the parabolic velocity-field curve approximation
    • Oct.
    • H. Hida, T. Itoh, and K. Ohata, “A novel 2DEGFET model based on the parabolic velocity-field curve approximation,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1580-1586, Oct. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.10 , pp. 1580-1586
    • Hida, H.1    Itoh, T.2    Ohata, K.3
  • 12
    • 0019606853 scopus 로고
    • Output characteristics of short-channel field-effect transistors
    • Aug.
    • B. Hoefflinger, “Output characteristics of short-channel field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-28, pp. 971-976, Aug. 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 971-976
    • Hoefflinger, B.1
  • 13
    • 0022685950 scopus 로고
    • Circuit simulation models for the high mobility transistor
    • Oct.
    • H. R. Yeager and R. W. Dutton, “Circuit simulation models for the high mobility transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 682-692, Oct. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 682-692
    • Yeager, H.R.1    Dutton, R.W.2
  • 14
    • 0016603256 scopus 로고
    • Signal and noise properties of gallium arsenide microwave field-effect transistors
    • New York: Academic
    • R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electron and Electronic Physics. New York: Academic, 1985, vol. 38, pp. 195-265.
    • (1985) Advances in Electron and Electronic Physics , vol.38 , pp. 195-265
    • Pucel, R.A.1    Haus, H.A.2    Statz, H.3
  • 16
    • 0021204462 scopus 로고
    • Parasitic MESFET in (AlGa) As/GaAs modulation doped FET's and MODFET characterization
    • Jan.
    • K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Parasitic MESFET in (AlGa) As/GaAs modulation doped FET's and MODFET characterization,” IEEE Trans. Electron Devices, vol. ED-31, pp. 29-35, Jan. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 29-35
    • Lee, K.1    Shur, M.S.2    Drummond, T.J.3    Morkoç, H.4
  • 17
    • 84941498029 scopus 로고
    • DC and microwave models for AIxGa1_c As/GaAs high electron mobility transistors
    • Dec.
    • M. H. Weiler and Y. Ayasli, “DC and microwave models for AIxGa1_c As/GaAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1854-1861, Dec. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1854-1861
    • Weiler, M.H.1    Ayasli, Y.2
  • 18
    • 0022733701 scopus 로고
    • Modulation-doped GaAs/(AlGa) As heterojunction field-effect transistors: MOD-FET's
    • June
    • T. J. Drummond, W. T. Masselink, and H. Morkoç, “Modulation-doped GaAs/(AlGa) As heterojunction field-effect transistors: MOD-FET's,” Proc. IEEE, vol. 74, no. 6, pp. 773-822, June 1986.
    • (1986) Proc. IEEE , vol.74 , Issue.6 , pp. 773-822
    • Drummond, T.J.1    Masselink, W.T.2    Morkoç, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.