Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs

Solid State Electronics

Volumn 22, Issue 1, 1979, Pages 47-54

  Lubberts, G ^a   Burkey, B C ^a  

^a EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

TRANSISTORS, FIELD EFFECT;

EID: 0018292477     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(79)90170-9     Document Type: Article

References (20)

1. Extraction of implantation profiles from the differential body effect of ion-implanted m.o.s. transistors
2. On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
3. On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]
4. The influence of debye length on the C-V measurement of doping profiles
5. Limitations of the CV technique for ion-implanted profiles
6. Using the MIS capacitor for doping profile measurements with minimal interface state error