A simplified model for subpinchoff conduction in depletion-mode IGFET's

IEEE Transactions on Electron Devices

Volumn 25, Issue 4, 1978, Pages 435-441

  Hendrickson, Thomas E ^a  

^a HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0017958547     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19104     Document Type: Article

References (4)

1. R. R. Troutman, “Subthreshold design considerations for insulated gate field-effect transistors,” IEEE J. Solid-state Circuits,vol. SC-9, pp. 55–60, Apr. 1974.
2. W. M. Gosney, “Subthreshold drain leakage currents in MOS field-effectransistors,” IEEE Trans. Electron Devices, vol. ED-19, pp. 213–219, Feb. 1972.
3. R. R. Troutman and S. N. Chakravarti, “Subthreshold characteristics of insulated-gate field-effect transistors,” IEEE Trans. Circuit Theory, vol. ED-20, pp. 559–665, Nov. 1973.
4. D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE,vol. 63, pp. 38–67, Jan. 1975.