메뉴 건너뛰기




Volumn 39, Issue 8, 1992, Pages 1928-1937

A New Two-Dimensional Model for the Potential Distribution of Short Gate-Length MESFET's and its Applications

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES; SEMICONDUCTOR MATERIALS;

EID: 0026908547     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.144686     Document Type: Article
Times cited : (31)

References (12)
  • 1
    • 84918249959 scopus 로고
    • Physical basis of the short-channel MESFET operation
    • T. Wada and J. Frey, “Physical basis of the short-channel MESFET operation,” IEEE J. Solid-State Circuits, vol. SC-14, no. 2, pp. 398–412, 1979.
    • (1979) IEEE J. Solid-State Circuits , vol.SC-14 , Issue.2 , pp. 398-412
    • Wada, T.1    Frey, J.2
  • 2
    • 0024105622 scopus 로고
    • Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps
    • K. Horio, H. Yanai, and T. Ikoma, “Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps,” IEEE Trans. Electron Devices, vol. 35, no. 11, pp. 1778—1785, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.11 , pp. 1778-1785
    • Horio, K.1    Yanai, H.2    Ikoma, T.3
  • 3
    • 0342615334 scopus 로고
    • Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's
    • J. C. Ramirez, P. J. Mcnally, L. S. Copper, J. J. Rosenberg, L. B. Freund, and T. N. Jackson, “Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 8, pp. 1232–1240, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.8 , pp. 1232-1240
    • Ramirez, J.C.1    Mcnally, P.J.2    Copper, L.S.3    Rosenberg, J.J.4    Freund, L.B.5    Jackson, T.N.6
  • 4
    • 0023979703 scopus 로고
    • An analytical two-dimensional model for silicon MESFET's
    • J. D. Marshall and J. D. Meindl, “An analytical two-dimensional model for silicon MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 373–383, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.3 , pp. 373-383
    • Marshall, J.D.1    Meindl, J.D.2
  • 5
    • 0023981449 scopus 로고
    • A sub- and near-threshold current model for silicon MESFET's
    • J. D. Marshall and J. D. Meindl, “A sub- and near-threshold current model for silicon MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 388–390, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.3 , pp. 388-390
    • Marshall, J.D.1    Meindl, J.D.2
  • 6
    • 0020850156 scopus 로고
    • +-layer-gate gap on short-channel effects of GaAs self-aligned MESFET's (SAINT)
    • +-layer-gate gap on short-channel effects of GaAs self-aligned MESFET's (SAINT),” IEEE Electron Device Lett., vol. EDL-4, no. 11, pp. 417–419, 1983.
    • (1983) IEEE Electron Device Lett. , vol.EDL-4 , Issue.11 , pp. 417-419
    • Kato, N.1    Matsuoka, Y.2    Ohwada, K.3    Moriya, S.4
  • 7
    • 0025432505 scopus 로고
    • An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: A short-channel effect
    • C.-S. Chang, D.-Y.S. Day, and S. Chan, “An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: A short-channel effect,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1182–1186, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.5 , pp. 1182-1186
    • Chang, C.-S.1    Day, D.-Y.S.2    Chan, S.3
  • 8
    • 0024610687 scopus 로고
    • Ion implantation effects on GaAs MESFET's
    • R. Anholt and T. W. Sigmon, “Ion implantation effects on GaAs MESFET's,” IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 250–255, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.2 , pp. 250-255
    • Anholt, R.1    Sigmon, T.W.2
  • 9
    • 0025207517 scopus 로고
    • Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel
    • S. N. Mohammad, M. B. Patil, J.-I. Chyi G. B. Gao, and H. Morkoç, “Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 11–20, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.1 , pp. 11-20
    • Mohammad, S.N.1    Patil, M.B.2    Chyi, J.-I.3    Gao, G.B.4    Morkoç, H.5
  • 10
    • 0023422243 scopus 로고
    • A new approach to analytically solving the two-dimensional Poisson's equation and its application in shortchannel MOSFET modeling
    • P. S. Lin and C. Y. Wu, “A new approach to analytically solving the two-dimensional Poisson's equation and its application in shortchannel MOSFET modeling,” IEEE Trans. Electron Devices, vol. ED-34, no. 9, pp. 1947–1956, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.9 , pp. 1947-1956
    • Lin, P.S.1    Wu, C.Y.2
  • 12
    • 0039720600 scopus 로고
    • A new methodology for two-dimensional numerical simulation of semiconductor devices
    • Sept
    • S. P. Chin and C. Y. Wu, “A new methodology for two-dimensional numerical simulation of semiconductor devices,” IEEE Trans. Computer-Aided Des, vol. 11, Sept. 1992.
    • (1992) IEEE Trans. Computer-Aided Des , vol.11
    • Chin, S.P.1    Wu, C.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.