-
1
-
-
84918249959
-
Physical basis of the short-channel MESFET operation
-
T. Wada and J. Frey, “Physical basis of the short-channel MESFET operation,” IEEE J. Solid-State Circuits, vol. SC-14, no. 2, pp. 398–412, 1979.
-
(1979)
IEEE J. Solid-State Circuits
, vol.SC-14
, Issue.2
, pp. 398-412
-
-
Wada, T.1
Frey, J.2
-
2
-
-
0024105622
-
Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps
-
K. Horio, H. Yanai, and T. Ikoma, “Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps,” IEEE Trans. Electron Devices, vol. 35, no. 11, pp. 1778—1785, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, Issue.11
, pp. 1778-1785
-
-
Horio, K.1
Yanai, H.2
Ikoma, T.3
-
3
-
-
0342615334
-
Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's
-
J. C. Ramirez, P. J. Mcnally, L. S. Copper, J. J. Rosenberg, L. B. Freund, and T. N. Jackson, “Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 8, pp. 1232–1240, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, Issue.8
, pp. 1232-1240
-
-
Ramirez, J.C.1
Mcnally, P.J.2
Copper, L.S.3
Rosenberg, J.J.4
Freund, L.B.5
Jackson, T.N.6
-
4
-
-
0023979703
-
An analytical two-dimensional model for silicon MESFET's
-
J. D. Marshall and J. D. Meindl, “An analytical two-dimensional model for silicon MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 373–383, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, Issue.3
, pp. 373-383
-
-
Marshall, J.D.1
Meindl, J.D.2
-
5
-
-
0023981449
-
A sub- and near-threshold current model for silicon MESFET's
-
J. D. Marshall and J. D. Meindl, “A sub- and near-threshold current model for silicon MESFET's,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 388–390, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, Issue.3
, pp. 388-390
-
-
Marshall, J.D.1
Meindl, J.D.2
-
6
-
-
0020850156
-
+-layer-gate gap on short-channel effects of GaAs self-aligned MESFET's (SAINT)
-
+-layer-gate gap on short-channel effects of GaAs self-aligned MESFET's (SAINT),” IEEE Electron Device Lett., vol. EDL-4, no. 11, pp. 417–419, 1983.
-
(1983)
IEEE Electron Device Lett.
, vol.EDL-4
, Issue.11
, pp. 417-419
-
-
Kato, N.1
Matsuoka, Y.2
Ohwada, K.3
Moriya, S.4
-
7
-
-
0025432505
-
An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: A short-channel effect
-
C.-S. Chang, D.-Y.S. Day, and S. Chan, “An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: A short-channel effect,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1182–1186, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, Issue.5
, pp. 1182-1186
-
-
Chang, C.-S.1
Day, D.-Y.S.2
Chan, S.3
-
8
-
-
0024610687
-
Ion implantation effects on GaAs MESFET's
-
R. Anholt and T. W. Sigmon, “Ion implantation effects on GaAs MESFET's,” IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 250–255, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.2
, pp. 250-255
-
-
Anholt, R.1
Sigmon, T.W.2
-
9
-
-
0025207517
-
Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel
-
S. N. Mohammad, M. B. Patil, J.-I. Chyi G. B. Gao, and H. Morkoç, “Analytical model for I-V characteristics of ion-implanted MESFET's with heavily doped channel,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 11–20, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, Issue.1
, pp. 11-20
-
-
Mohammad, S.N.1
Patil, M.B.2
Chyi, J.-I.3
Gao, G.B.4
Morkoç, H.5
-
10
-
-
0023422243
-
A new approach to analytically solving the two-dimensional Poisson's equation and its application in shortchannel MOSFET modeling
-
P. S. Lin and C. Y. Wu, “A new approach to analytically solving the two-dimensional Poisson's equation and its application in shortchannel MOSFET modeling,” IEEE Trans. Electron Devices, vol. ED-34, no. 9, pp. 1947–1956, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, Issue.9
, pp. 1947-1956
-
-
Lin, P.S.1
Wu, C.Y.2
-
12
-
-
0039720600
-
A new methodology for two-dimensional numerical simulation of semiconductor devices
-
Sept
-
S. P. Chin and C. Y. Wu, “A new methodology for two-dimensional numerical simulation of semiconductor devices,” IEEE Trans. Computer-Aided Des, vol. 11, Sept. 1992.
-
(1992)
IEEE Trans. Computer-Aided Des
, vol.11
-
-
Chin, S.P.1
Wu, C.Y.2
|