An Analytical Current-Voltage Characteristics Model for High Electron Mobility Transistors Based on Nonlinear Charge-Control Formulation

IEEE Transactions on Electron Devices

Volumn 36, Issue 10, 1989, Pages 2299-2306

  Shey, An Jui ^a   Ku, Walter H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; INTEGRATED CIRCUITS;

CURRENT-VOLTAGE CHARACTERISTICS; FERMI POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0024755267     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40914     Document Type: Article

References (14)

1. D. Delagebeaudeuf and N. T. Linh, “Metal-(n) Al GaAs-GaAs two-dimensional dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, 955–960, 1982.
2. T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, “Model for modulation doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-3, pp. 338–341, 1982.
3. K. Lee, M. Shur, T. J. Drummond, and H. Morkoç, “Current-voltage and capacitance-voltage characteristics of modulation-doped field-effect effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, pp. 207–212, 1983.
4. M. H. Weiler and Y. Ayasli, “DC and microwave models for AlxGa 1- x As/GaAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1854–1861, 1984.
5. G.-W. Wang and W. H. Ku, “An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 657–663, 1986.
6. W. A. Hughes and C. M. Snowden, “Nonlinear charge control in AlGaAs/GaAs modulation-doped FET’s,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1617–1625, 1987.
7. S. Kola, J. M. Goloio, and G. N. Maracas, “An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling,” IEEE Electron Device Lett., vol. 9, pp. 136–138, 1988.
8. A.-J. Shey and W. H. Ku, “On the charge control of the two-dimensional electron gas for analytical modeling of HEMT’s,” IEEE Electron Device Lett., vol. 9, 624–626, 1988.
9. F. Stern, “Self-consistent results for n-type Si inversion layers,” Phys. Rev. B, vol. 5, pp. 4891–4899, 1972.
10. F. Stern and S. D. Sarma, “Electron energy levels in GaAs-Ga, Ga 1- x A1 x As heterojunction,” Phys. Rev. B, vol. 30, pp. 840–848, 1984.
11. A. B. Grebene and S. K. Ghandhi, “Signal and noise properties of gallium arsenic microwave field-effect transistors,” Solid-State Electron., vol. 12, pp. 573–589, 1969.
12. D. Loret, “Two-dimensional numerical model for the high electron mobility transistor,” Solid-State Electron., vol. 30, pp. 1197–1203, 1987.
13. F. A. Buot, “Two-dimensional numerical modelling of HEMT using an energy transport model,” COMPEL, vol. 6, pp. 45–52, 1987.
14. G. Salmer, J. Zimmermann, and R. Fauquembergue, “Modeling of MODFET’s,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1124–1140, 1988.