MODFET DC MODEL WITH IMPROVED PINCHOFF AND SATURATION CHARACTERISTICS.

IEEE Transactions on Electron Devices

Volumn ED-33, Issue 5, 1986, Pages 664-672

  Rohdin, Hans ^a   Roblin, Patrick ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - MATHEMATICAL MODELS;

2-D ELECTRON GAS; ELECTRON VELOCITY SATURATION; MODULATION DOPED FET;

TRANSISTORS, FIELD EFFECT;

EID: 0022683226     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/t-ed.1986.22549     Document Type: Article

References (24)