Analysis and Characterization of the Depletion-Mode IGFET

IEEE Journal of Solid-State Circuits

Volumn 15, Issue 3, 1980, Pages 331-340

  El Mansy, Youssef A ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

IGFET;

TRANSISTORS, FIELD EFFECT;

EID: 0019024548     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1980.1051395     Document Type: Article

References (14)

1. L. Forbes “n-channel ion-implanted enhancement/depletion FET circuit and fabrication technology,” IEEE J. Solid-State Circuits, vol. SC-8, pp. 226–230, June 1973.
2. F. F. Fang and H. S. Rupprecht “High performance MOS integrated circuits using ion-implantation technique,” IEEE J. Solid-State Circuits, vol. SC-10, pp. 205–211, Aug. 1975.
3. B. J. Hosticka et al. “MOS sampled data recursive filters using switched capacitor integrators,” IEEE J. Solid-State Circuits, vol. SC-12, pp. 600–608, Dec. 1977.
4. See, for example, 1978 IEEE ISSC Dig. Tech. Papers:
5. E. M. Blaser and D. A. Conrad, “FET logic configuration,” pp. 14–15.
6. R. W. Knepper, “Dynamic depletion mode: An E/D MOSFET circuit method,” pp. 16–17.
7. R. A. Blouschild et al., “An NMOS voltage reference,” pp. 50–51.
8. J. R. Edwards and G. Man “Depletion-mode IGFET made by deep ion-implantation,” IEEE Trans. Electron Devices, vol. ED-20, pp. 283–289, Mar. 1973.
9. J. S. Huang and G. W. Taylor “Modeling of an ion-implanted silicon-gate depletion-mode IGFET,” IEEE Trans. Electron Devices, vol. ED-22, pp. 995–1000, Nov. 1975.
10. C. G. Verbracken et al. “Impurity profile determination and DC modeling of the JIGFET,” IEEE Trans. Electron Devices, vol. ED-24, pp. 723–730, June 1977.
11. R. A. Haken “Analysis of the deep depletion MOSFET and the use of the DC characteristics for determining bulk-channel charge-coupled device parameters,” Solid-State Electron., vol. 21, pp. 753–761, 1978.
12. A. M. Mohsen and F. J. Morris “Measurements on depletion-mode field-effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devices,” Solid-State Electron., vol. 18, pp. 407–416, 1975.
13. G. Lubberts and B. C. Burkey, “Capacitance and doping profiles of ion-implanted buried-channel MOSFETS,” Solid-State Electron., vol. 22, pp. 47–54, 1979.
14. J. A. Robinson, Y. A. El-Mansy, and A. R. Boothroyd, “A general four-terminal charging-current model for the insulated-gate field-effect transistor,” Solid-State Electron., vol. 22, 1979.