CIRCUIT SIMULATION MODELS FOR THE HIGH ELECTRON MOBILITY TRANSISTOR.

IEEE Transactions on Electron Devices

Volumn ED-33, Issue 5, 1986, Pages 682-692

  Yeager, Hal R ^a   Dutton, Robert W ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT - TRANSPORT PROPERTIES;

3-TERMINAL MODEL; HIGH ELECTRON MOBILITY TRANSISTOR;

TRANSISTORS, FIELD EFFECT;

EID: 0022685950     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/t-ed.1986.22552     Document Type: Article

References (19)