The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs

Solid State Electronics

Volumn 34, Issue 7, 1991, Pages 681-692

  Karmalkar, S ^a   Bhat, K N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MESFET--ION IMPLANTATION; SEMICONDUCTOR DEVICES, MOSFET--ION IMPLANTATION;

MULTIPLE-IMPLANTED DEVICES; SHIFTED-RECTANGLE APPROXIMATION;

TRANSISTORS, FIELD EFFECT;

EID: 0026187737     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90003-H     Document Type: Article

References (21)

1. Electron mobility in n-channel depletion-type MOS transistors
2. On-line extraction of model parameters of a long buried-channel MOSFET
3. Analytical models of ion-implanted GaAs FET's
4. An accurate model for a depletion mode IGFET used as a load device
5. A device model for buried-channel CCD's and MOSFET's with Gaussian impurity profiles
6. A device model for an ion-implanted MESFET
7. Threshold shifts due to nonuniform doping profiles in surface channel MOSFET's
8. A new approach to the modeling of nonuniformly doped short-channel MOSFET's
9. The correct equivalent box representation for the buried layer of BC MOSFET's in terms of the implantation parameters
10. Analysis and characterization of the depletion-mode IGFET
11. Short-channel MOST threshold voltage model
12. Model for the channel-implanted enhancement-mode IGFET
13. Calculation of threshold voltage in nonuniformly doped MOSFET's