An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling

Solid State Electronics

Volumn 36, Issue 2, 1993, Pages 201-203

  DasGupta, Nandita ^a   DasGupta, Amitava ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS;

FERMI POTENTIAL VARIATION; GATE VOLTAGE; SHEET CARRIER CONCENTRATION; TWO-DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027543730     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90140-L     Document Type: Article

References (9)

1. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
2. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
3. A treatise on the capacitance—Voltage relation of high electron mobility transistors