Use of Noise Thermometry to Study the Effects of Self-Heating in Submicrometer SOI MOSFET's

IEEE Electron Device Letters

Volumn 13, Issue 5, 1992, Pages 279-281

  Bunyan, R J T ^a   Uren, M J ^a   Alderman, J C ^b   Eccleston, W ^c  

^a DRA   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL - THERMAL NOISE; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY;

DRAIN-SOURCE BREAKDOWN; NOISE THERMOMETRY; SELF-HEATING EFFECTS; SUBMICROMETER SOI MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026868326     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145053     Document Type: Article

References (10)

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