Monitoring the temperature rise in SOI transistors by measurement of leakage current

1991 IEEE International SOI Conference Proceedings

Volumn , Issue , 1992, Pages 28-29

  McDaid, L J ^a   Hall, S ^a   Eccleston, W ^a   Alderman, J C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--CURRENT; SEMICONDUCTING SILICON; TEMPERATURE MEASUREMENT;

LEAKAGE CURRENT MEASUREMENT; SILICON ON INSULATOR; SOI; TEMPERATURE RISE MONITORING;

TRANSISTORS;

EID: 0026707171     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)