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Volumn 14, Issue 3, 1993, Pages 133-135

Linear Dynamic Self Heating in SOI MOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYZERS; ELECTRIC PROPERTIES; FREQUENCY RESPONSE; HEATING; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; VECTORS;

EID: 0027554870     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215135     Document Type: Article
Times cited : (27)

References (12)
  • 1
    • 0343650005 scopus 로고
    • Self Heating and temperature measurement in sub-µm-MOSFETs
    • P. G. Mautry and J. Trager, “Self Heating and temperature measurement in sub-µm-MOSFETs,” in Proc. ESSDERC, 1989, pp. 675–678.
    • (1989) Proc. ESSDERC , pp. 675-678
    • Mautry, P.G.1    Trager, J.2
  • 2
    • 0026868326 scopus 로고
    • Use of noise thermometry to study the effects of Self Heating in submicrometer SOI MOSFET’s
    • R. J. T. Bunyan, M. J. Uren, J. C. Alderman, and W. Eccleston, “Use of noise thermometry to study the effects of Self Heating in submicrometer SOI MOSFET’s,” IEEE Electron Device Lett., vol. 13, no. 5, pp. 279–281, 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , Issue.5 , pp. 279-281
    • Bunyan, R.J.T.1    Uren, M.J.2    Alderman, J.C.3    Eccleston, W.4
  • 3
    • 0024945944 scopus 로고
    • Characterisation of negative resistance and bipolar latchup in thin film SOI transistors by two-dimensional simulation
    • G. A. Armstrong, N. J. Thomas, and J. R. Davis, “Characterisation of negative resistance and bipolar latchup in thin film SOI transistors by two-dimensional simulation,” in 1989 IEEE SOS/ SOI Technology Conf Proc., pp. 44–45.
    • (1989) IEEE SOS/ SOI Technology Conf Proc. , pp. 44-45
    • Armstrong, G.A.1    Thomas, N.J.2    Davis, J.R.3
  • 4
    • 0017983691 scopus 로고
    • Negative dynamic resistance in MOS devices
    • D. Sharma, J. Gautier, and G. Merckel, “Negative dynamic resistance in MOS devices,” IEEE J. Solid-State Circuits, vol. SC-13, no. 3, pp. 378–380, 1978.
    • (1978) IEEE J. Solid-State Circuits , vol.SC-13 , Issue.3 , pp. 378-380
    • Sharma, D.1    Gautier, J.2    Merckel, G.3
  • 5
    • 0025699582 scopus 로고
    • Electrical transient study of negative resistance in SOI MOS transistors
    • O. Le Neel and M. Haond, “Electrical transient study of negative resistance in SOI MOS transistors,” Electron. Lett., vol. 26, no. 1, pp. 73–74, 1990.
    • (1990) Neel and M. Haond , vol.26 , Issue.1 , pp. 73-74
    • Le, O.1
  • 7
    • 0026626132 scopus 로고
    • Thermal time constants in SOI MOSFET’s
    • M. Berger and G. Burbach, “Thermal time constants in SOI MOSFET’s,” in 1991 IEEE Int. SOI Conf. Proc., pp. 24–25.
    • (1991) IEEE Int. SOI Conf. Proc. , pp. 24-25
    • Berger, M.1    Burbach, G.2
  • 9
    • 0001775647 scopus 로고
    • Internal thermal feedback in four-poles especially in transistors
    • O. Muller, “Internal thermal feedback in four-poles especially in transistors,” Proc. IEEE, vol. 52, pp. 924–930, 1964.
    • (1964) Proc. IEEE , vol.52 , pp. 924-930
    • Muller, O.1
  • 10
    • 0026137501 scopus 로고
    • Estimation of heat transfer in SOI-MOSFET’s
    • M. Berger and Z. Chai, “Estimation of heat transfer in SOI-MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, no. 4, pp. 871–875, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.4 , pp. 871-875
    • Berger, M.1    Chai, Z.2
  • 11
    • 0027114149 scopus 로고
    • Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs
    • D. Flandre, “Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs,” Electron. Lett., vol. 28, no. 10, pp. 967–969, 1992.
    • (1992) Electron. Lett. , vol.28 , Issue.10 , pp. 967-969
    • Flandre, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.