Modelling of thin film SOI devices for circuit simulation including per-instance dynamic self-heating effects

IEEE International SOI Conference

Volumn , Issue , 1993, Pages 150-151

  Lee, M S L ^a   Redman White, W ^a   Tenbroek, B M ^a   Robinson, M ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CODES (SYMBOLS); COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; HEATING; LUMPED PARAMETER NETWORKS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THIN FILMS;

CHANNEL SHORTENING; CIRCUIT SIMULATION MODEL; ELECTRO-THERMAL CIRCUIT; NEGATIVE DIFFERENTIAL RESISTANCE; PARASITIC BIPOLAR BREAKDOWN EFFECT; PER-INSTANCE DYNAMIC SELF HEATING EFFECT; SPICE3 CODE; THIN FILM SOI MOSFET; VERTICAL FIELD MOBILITY DEGRADATION;

SEMICONDUCTOR DEVICE MODELS;

EID: 0027814093     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)