A Small-Signal Model for the Frequency-Dependent Drain Admittance in Floating-Substrate MOSFET’s

IEEE Journal of Solid-State Circuits

Volumn 27, Issue 8, 1992, Pages 1186-1193

  Howes, Rupert ^a   Redman White, William ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS--DESIGN; SEMICONDUCTOR DEVICES, MOSFET; THERMAL EFFECTS;

DRAIN ADMITTANCE; FREQUENCY DEPENDENCE; SMALL SIGNAL MODELS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026904737     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.148327     Document Type: Article

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