Physical origin of negative differential resistance in soi transistors

Electronics Letters

Volumn 25, Issue 13, 1989, Pages 827-828

  McDaid, L J ^a   Hall, S ^a   Mellor, P H ^a   Eccleston, W ^a   Alderman, J C ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Allen Clark Research Centre Plessey ^*  (United Kingdom)

Author keywords

Resistance; Semiconductor devices and materials; Silicon; Transistors

Indexed keywords

SEMICONDUCTOR DEVICES, MOS--THIN FILMS;

BURIED INSULATOR; KINK EFFECT; LAPLACE'S EQUATION; NEGATIVE DIFFERENTIAL RESISTANCE; PINCHOFF POINT; SOI TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0024680209     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19890557     Document Type: Article

References (7)

1. Colinge, J.-P.: ‘Subthreshold slope of thin-film SOI MOSFETs’, IEEE Electron. Dev. Lett., 1985, EDL-7, (4), pp. 244-246
2. Mcdaid, L., Hall, S., And Eccleston, W.: ‘Theory for the subthreshold slope in thin-film SOI MOSFETs’, to be published
3. Colinge, J.-P.: ‘Reduction of kink effect in thin-film SOI MOSFETs’, IEEE Electron. Dev. Lett., 1988, 9, (2), pp. 97-99
4. Sharma, D. K., And Ramanathan, K. V.: ‘Modelling thermal effects on MOS I/V characteristics’, IEEE Electron. Dev. Lett., 1983, EDL-4, (10), pp. 362-364
5. Sharma, D. K., Gautier, J., And Merckel, G.: ‘Negative dynamic resistance in MOS devices’, IEEE J. Solid-State Circuits, 1978, SC-13, (3), pp. 378-380
6. Sharma, D. K., Gautier, J., And Merckel, G.: ‘A high-voltage circuit for driving liquid-crystal displays’, IEEE J. Solid-State Circuits., 1978, SC-13, (3), pp. 375-378
7. Mcdaid, L. J., Hall, S., And Eccleston, W.: ‘Interpretation of capacitance-voltage characteristics on SOI capacitors’, Solid-State Electron., 1989, 32, (1), pp. 65-68