Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements

Electronics Letters

Volumn 29, Issue 13, 1993, Pages 1180-1181

  Redman White, W ^a   Lee, M S L ^a   Tenbroek, B M ^a   Uren, M J ^b   Bunyan, R J T ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b DRA   (United Kingdom)

Author keywords

Field effect transistors; Transistors

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; SPECIFIC HEAT; SUBSTRATES; THERMAL EFFECTS; THERMAL NOISE; THERMODYNAMIC PROPERTIES;

CHANNEL CURRENT SELF HEATING; DYNAMIC THERMAL CHARACTERISTICS; SMALL SIGNAL MEASUREMENTS; STANDARD TRANSISTOR STRUCTURES;

MOSFET DEVICES;

EID: 0027617960     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930789     Document Type: Article

References (10)

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