Electron spin resonance study of E′ trapping centers in SIMOX buried oxides

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1247-1252

  Roitman, P ^b   Lenahan, P M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RESONANCE; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET RADIATION;

ELECTRON SPIN RESONANCE;

SEMICONDUCTOR MATERIALS;

EID: 0026400390     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124100     Document Type: Article

References (18)

1. J. Stoemenos, C. Jasaud, M. Bruel, and J. Margail, “New Conditions for Synthesizing SOI Structures by High Dose Oxygen Implantation,” J. Crst. Growth 73, 546 (1985).
2. C. Jaussaud, J. Stoemenos, J. Margail, M. Dupuy, B. Blanchard, and M. Bruel, “Microstructure of Silicon Implanted with High Dose Oxygen Ions,” Appl. Phys. Lett 46, 1064 (1985).
3. H. E. Boesch, Jr., T. L. Taylor, L. R. Hite, and W. E. Bailey, “Time-Dependent Hole and Electron Trapping Effects in SIMOX Buried Oxides,” IEEE Trans NS31, 1982 (1990).
4. R. G. Barklie, A. Hobbs, P. L. F. Hemmet, and K. Reesor, “EPR of Defects in Silicon-on-Insulator Insulator Structures Formed by Ion Implantation: I. 0+ Implantation,” J. Phys. C. 19, 6417 (1986).
5. T. Makino and J. Takahashi, “Electron Spin Resonance Studies on Buried Oxide Silicon-on-Insulator,” Insulator,” Appl. Phys. Lett 50, 267 (1987).
6. R. E. Stahlbush, W. E. Carlos, and J. M. Prokes, “Radiation-and Processing-Induced Effects in SIMOX: A Spectroscopic Study,” IEEE Trans NS 34, 1680 (1987).
7. A. Stesmans, R. A. B. Devine, A. Revesz, and H. Hughes, “Irradiation-Induced ESR Active Defects in SIMOX Structures,” IEEE Trans NS 37, 2008 (1990).
8. R. A. Weeks, “Paramagnetic Resonance of Lattice Defects in Irradiated Quartz,” J. Appl. Phys. 27, 1376 (1956).
9. R. H. Silsbee, “Electron Spin Resonance in Neutron-Irradiated Quarts,” J. Appl. Phys., 32, 1459 (1961).
10. F. J. Feigl, W. B. Fowler and K. L. Yip, “Oxygen Vacancy Model for the E' Center in SiO2, Solid State Commun.,” 14, 225, (1974).
11. D. L. Griscom, “E' Center in Glassy SiO2: 170, and ‘Very Weak’ Superhyperfine Structure,” Phys Rev. B 22, 4192 (1980).
12. J. F. Conley, P. M. Lenahan and P. Roitman, “Direct Experimental Evidence for a Dominant Hole Trapping Center in SIMOX Oxides,” Proc. IEEE SOS/SOI Technology Conf. (1991).
13. J. F. Conley, P. M. Lenahan and P. Roitman, “Electron Spin Resonance Study of Trapping Centers in SIMOX Buried Oxides,” Proceeding of the Insulating Films on Semiconductors (INFOS) Conference, W. Eccleston, editor, Institute of Physics, Liverpool, London, April (1991)
14. P. M. Lenahan and P. V. Dressendorfer, “Microstructural Variations in Radiation Hard and Soft Oxides Observed Through Electron Spin Resonance,” IEEE Trans NS 30, 4602 (1983).
15. P. M. Lenahan and P. V. Dressendorfer, “Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices,” J. Atopl. Phys. 55, 3495 (1984).
16. H. S. Witham and P. M. Lenahan, “Nature of E' Deep Hole Trap in Metal-Oxide-Semiconductor Oxide,” Appl. Phys. Lett 51, 1007 (1987).
17. W. L. Warren, P. M. Lenahan, B. Robinson, and I. H. Stathis, “Neutral E' Centers in Microwave Downstream Plasma Enhanced Chemical-Vapor-Deposited Deposited Silicon Dioxide,” Appl. Phys. Lett 53, 482 (1988).
18. Z. A. Weinberg, W. C. Johnson, and M. A. Lampert, “High Field Transport in SiO2 on Silicon Induced By Corona Charging of the Unmetallized Surface,” J. Appl. Phys. 47, 248 (1976).