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Journal of Applied Physics

Volumn 67, Issue 1, 1990, Pages 580-583

Radiation-induced charge neutralization and interface-trap buildup in metal-oxide-semiconductor devices

(1) Fleetwood, D M a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005123159 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.345199 Document Type: Article

Times cited : (105)

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