Production of E′δ center induced by dry heat treatment of nonburied SiO2 films

Applied Physics Letters

Volumn 69, Issue 1, 1996, Pages 28-30

  Zvanut, M E ^a   Chen, T L ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041753223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118107     Document Type: Article

References (11)

1. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
2. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman, and G. A. Brown, IEEE Trans. Nucl. Sci. 39, 2086 (1992).
3. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. A. D. Devine, W. P. Masazara, and J. B. McKitterick, IEEE Trans. Nucl. Sci. 40, 1755 (1993).
4. D. L. Griscom and E. F. Friebele, Phys. Rev. B 34, 7524 (1986).
5. K. Vanheusden and A. Stesmans, J. Appl. Phys. 74, 275 (1993).
6. A. Stesmans and K. Vanheusden, J. Appl. Phys. 76 1681 (1994).
7. J. F. Conley, Jr., P. M. Lenahan, H. L. Evans, R. K. Lowry, and T. J. Morthorst, J. Appl. Phys. 76, 2872 (1994).
8. R. A. B. Devine, D. Mathiot, W. L. Warren, D. M. Fleetwood, and B. Aspar, Appl. Phys. Lett. 63, 2926 (1993).
9. M. E. Zvanut, T. L. Chen, R. E. Stahlbush, E. S. Steigerwalt, and G. A. Brown, J. Appl. Phys. 77, 4329 (1995).
10. E. H. Poindexter and W. L. Warren, J. Electrochem. Soc. 142, 2508 (1996).
11. R. A. B. Devine, D. Mathiot, W. L. Warren, and B. Aspar, J. Appl. Phys. 79, 2302 (1996).