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Applied Physics Letters

Volumn 63, Issue 21, 1993, Pages 2926-2928

Point defect generation during high temperature annealing of the Si-SiO2 interface

(5) Devine, R A B a Mathiot, D a Warren, W L b Fleetwood, D M c Aspar, B c

a ORANGE LABS (France)

b SANDIA NATIONAL LABORATORIES (United States)

c CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544478697 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.110275 Document Type: Article

Times cited : (87)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.