Nonuniform oxide charge and paramagnetic interface traps in high-temperature annealed Si/SiO2/Si structures

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2117-2119

  Vanheusden, K ^a   Warren, W L ^a   Schwank, J R ^a   Fleetwood, D M ^a   Shaneyfelt, M R ^a   Winokur, P S ^a   Devine, R A B ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039438908     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115603     Document Type: Article

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