Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I. Orientation Dependence and Behavior of Passivation Layers

Journal of the Electrochemical Society

Volumn 137, Issue 11, 1990, Pages 3612-3626

  Seidel, H ^a   Csepregi, L ^b   Heuberger, A ^c   Baumgortel H ^d  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b Fraunhofer Institut fur Festkorpertechnologie   (Germany)

^c Fraunhofer Institut füt Mikrostrukturtechnik ^*  (Germany)

^d FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALI METAL COMPOUNDS - SOLUTIONS; CRYSTALS - ORIENTATION; ELECTROCHEMISTRY - MATHEMATICAL MODELS; ETCHING - ANISOTROPY;

ANISOTROPIC ETCHING; SINGLE-CRYSTAL SILICON;

SEMICONDUCTING SILICON;

EID: 0025521074     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2086277     Document Type: Article

References (56)

1. P. J. Holmes, in “The Electrochemistry of Semiconductors.” P. J. Holmes, Editor, p. 329, Academic Press, Ltd., London (1962).
2. R. M. Finne and D. L. Klein, Journal of the Electrochemical Society, 114, 965 (1967).
3. D. B. Lee, J. Appl. Phys., 40, 4569 (1969).
4. E. S. Ammar and T. J. Rodgers, IEEE Trans. Electron Devices, ED-27, 907 (1980).
5. K. E. Bean, IEEE Trans. Electron Devices, ED-25, 1185 (1978).
6. E. Bassous, IEEE Trans. Electron Devices, ED-25, 1178 (1978).
7. K. E. Petersen, IEEE Trans. Electron Devices, ED-25, 1241 (1978).
8. K. E. Petersen, Proc. IEEE, 70, 420 (1982).
9. H. Seidel and L. Csepregi, Sensors and Actuators, 4, 455 (1983).
10. G. Kaminsky, J. Vac. Sci. Technol., B3, 1015 (1985).
11. L. M. Roylance and J. B. Angell, IEEE Trans. Electron Devices, ED-29, 27 (1982).
12. K. E. Petersen and J. Brown, in “Digest of Technical Papers of The Third International Conference on Solid-State Sensors and Actuators,” p. 361, Philadelphia, PA, June 11–14, 1985.
13. E. Bassous, H. H. Taub, and L. Kuhn, Appl. Phys. Lett., 31, 135 (1977).
14. C. M. Schroeder, Bell Syst. Tech. J., 57, 75 (1978).
15. S. C. Terry, J. H. Jerman, and J. B. Angell, IEEE Trans. Electron Devices, ED-26, 1880 (1979).
16. J. M. Crishal and A. L. Harrington, Journal of the Electrochemical Society, 111, 202 (1962), Abs. 89.
17. J. B. Price, in “Semiconductor Silicon,” H. R. Huff and R. R. Burgess, Editors, p. 339, The Electrochemical Society Softbound Proceedings Series, Princeton, NJ (1973).
18. L. D. Clark, Jr., J. L. Lund, and D. J. Edell, in “Technical Digest,” IEEE Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, June 6–9, 1988.
19. W. Kern, RCA Rev., 39, 278 (1978).
20. W. Kern and D. A. Puotinen, RCA Rev., 31, 187 (1970).
21. M. Asano, T. Cho, and H. Muraoka, Abstract 354, p. 911, The Electrochemical Society Extended Abstracts, Vol. 76–2, Las Vegas, NV, Oct. 17–22, 1976.
22. A. Reisman, M. Berkenblit, S. A. Chan, F. B. Kaufman, and D. C. Green, Journal of the Electrochemical Society, 126, 1406 (1979).
23. E. Bassous, U.S. Pat. 3,921,916 (1975).
24. N. F. Raley, Y. Sugiyama, and T. van Duzer, Journal of the Electrochemical Society, 131, 161 (1984).
25. X.-P. Wu, Q.-H. Wu, and W. H. Ko, in “Digest of Technical Papers of The Third International Conference on Solid-State Sensors and Actuators,” p. 291, Philadelphia, PA, June 11–14, 1985.
26. M. M. Abu-Zeid, D. L. Kendall, G. R. de Guel, and R. Galeazzi, Abstract 275, p. 400, The Electrochemical Society Extended Abstracts, Vol. 85–1, Toronto, Ont., Canada, May 12–17, 1985.
27. M. J. Declercq, L. Gerzberg, and J. D. Meindl, Journal of the Electrochemical Society, 122, 545 (1975).
28. M. Mehregany and S. D. Senturia, Sensors and Actuators, 13, 375 (1988).
29. D. L. Kendall, in “Annual Review of Materials Science,” R. A. Huggins, Editor, Vol. 9, 373 (1979).
30. D. L. Kendall and G. R. de Guel, in “Micromachining and Micropackaging of Transducers,” C. D. Fung, P. W. Cheung, W. H. Ko, and D. G. Fleming, Editors, pp. 107–124, Elsevier, Amsterdam (1985).
31. L. D. Clark, Jr. and D. J. Edell, in Proceedings of IEEE Micro-Robots and Teleoperators Workshop, Hyannis, MA, Nov. 9–11, 1987 (Cat. 87TH0204–8).
32. E. D. Palik, H. F. Gray, and P. B. Klein, Journal of the Electrochemical Society, 130, 956 (1983).
33. E. D. Palik, V. M. Bermudez, and O. J. Glembocki, Journal of the Electrochemical Society, 132, 871 (1985).
34. E. D. Palik, V. M. Bermudez, and O. J. Glembocki, Journal of the Electrochemical Society, 132, 135 (1985).
35. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, Journal of the Electrochemical Society, 137, 3626 (1990).
36. L. Csepregi, A. Heuberger, and H. Seidel, in “Annual Report of The Fraunhofer Society,” p. 8, Munich, Germany (1980).
37. D. L. Kendall and A. Torres-Jacome, Journal of the Electrochemical Society, 128, 238C (1981), Abs. 545RNP.
38. D. L. Kendall, G. R. de Guel, and A. Torres-Jacome, Abstract 132, p. 209, The Electrochemical Society Extended Abstracts, Vol. 82–1, Montreal, Que., Canada, May 9–14, 1982.
39. H. Seidel and L. Csepregi, Abstract 123, p. 194.
40. H. Seidel, Ph.D Thesis, Free University of Berlin, Germany (1986).
41. L. Csepregi, R. Hauk, R. Niessl, and H. Seidel, BMFT Research Report T 83–089, Fachinformations-zentrum Karlsruhe, Germany (1983).
42. G. R. de Guel, D. L. Kendall, and R. Galeazzi, Abstract 518, p. 758, The Electrochemical Society Extended Abstracts, Vol. 84–2, New Orleans, LA, Oct. 7–12, 1984.
43. O. J. Glembocki, R. E. Stahlbush, and M. Tomkiewicz, Journal of the Electrochemical Society, 132, 145 (1985).
44. S. M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, Inc., New York (1981).
45. R. Memming, in “Comprehensive Treatise of Electrochemistry,” Vol. 7, B. E. Conway, J. O'M, Bockris, E. Yeager, S. U. M. Khan, and R. E. White, Editors, pp. 535, Plenum Press, New York (1983).
46. D. R. Turner, Journal of the Electrochemical Society, 103, 252 (1956).
47. R. K. Iler, “The Chemistry of Silica,” pp. 10, John Wiley & Sons, Inc., New York (1979).
48. C. C. Tsai, in “Amorphous Silicon And Related Materials,” H. Fritzsche, Editor, p. 123, World Scientific, Singapore (1989).
49. G. Müller, Appl. Phys., A45, 41 (1988).
50. M. Grundner and H. Jacob, Appl. Phys., A39, 73 (1986).
51. J. A. Kerr, in “CRC Handbook of Chemistry and Physics,” R. C. Weast, Editor-in-Chief, pp. F-171, CRC, Boca Raton, FL (1984).
52. A. Zangwill, “Physics at Surfaces,” p. 91, Cambridge University Press, Cambridge, MA (1988).
53. I. Ivanov, A. Mazur, and J. Pollmann, Surf. Sci., 92, 365 (1980).
54. R. J. Hamers, R. M. Tromp, and J. E. Demuth, Phys. Rev. Lett., 56, 1972 (1986).
55. C. D. Fung, P. W. Cheung, and W. H. Ko, IEEE Trans. Electron Devices, ED-33, 8 (1986).
56. J. A. Davis, R. O. James, and J. O. Leckie, J. Colloid Interface Sci., 63, 480 (1978).