Characterization and depth profiling of E′ defects in buried SiO 2

Journal of Applied Physics

Volumn 74, Issue 1, 1993, Pages 275-283

  Vanheusden, K ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544457445     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.354103     Document Type: Article

References (0)