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Physical Review B
Volumn 42, Issue 6, 1990, Pages 3444-3453
Dissociation kinetics of hydrogen-passivated (111) Si-SiO2 interface defects
Author keywords

[No Author keywords available]
Indexed keywords

EID: 11744293896     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.42.3444     Document Type: Article
Times cited : (184)
References (34)
  • 2
    • 84926820509 scopus 로고    scopus 로고
    • E. H. Poindexter, E. R. Ahlstrom, and P. J. Caplan, in The Physics of SiO2 and its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), p. 227.
  • 5
    • 30844431996 scopus 로고
    • of Si-SiO2 defect physics, see the 13 papers in Semicond
    • For a recent review of Si-SiO2 defect physics, see the 13 papers in Semicond. Sci. Technol. 4, 961-1126 (1989).
    • (1989) Sci. Technol. , vol.4 , pp. 961-1126
  • 17
    • 84926842545 scopus 로고    scopus 로고
    • in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 308.
  • 23
    • 84926820508 scopus 로고    scopus 로고
    • The ``new'' silicon substrates used for the most part in this study were from a different manufacturer than the ``old'' silicon substrates used in Ref. 12. The ``new'' silicon substrates were more lossy in our microwave cavity after thermal oxidation at 850 degrC. This problem was resolved by changing the oxidation temperature to 750 degrC. Oxidation of the ``old'' silicon substrates at 750 degrC showed no difference in kinetic behavior from the ``new'' samples. The data in Fig. 3 happened to have been taken earlier using ``old'' silicon substrates oxidized at 850 degrC.
  • 24
    • 84926820507 scopus 로고    scopus 로고
    • See, for example, F. Seitz, The Modern Theory of Solids (McGraw-Hill, New York, 1940), p. 311.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.