Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 547-553

  Rousseau, Paul M ^a   Griffin, Peter B ^a   Kuehne, Stephen C ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ANNEALING; COMPUTER SIMULATION; DIFFUSION; ION IMPLANTATION; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

BIPOLAR DEVICES; BURIED BORON LAYER; ELECTRICAL DEACTIVATION; FULL COUPLED DIFFUSION EFFECTS;

ARSENIC;

EID: 0030130098     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485536     Document Type: Article

References (25)

1. A. H. Perera, W. J. Taylor, and M. Orlowski, "Impact of arsenic deactivation in polycrystalline silicon and at polysilicon-monosilicon interfaces on contact resistance." Tech. Dig. Int. Electron Devices Meet., 19pp. 835-838.
2. S. W. Crowder, P.M. Rousseau, J.P. Snyder, J.A. Scott, P. B. Griffin, and J.D. Plummet, "The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFET's," Tech. Dig. Int. Electron Devices Meet., 19, pp 427-430.
3. P. M. Rousseau, P. B. Griffin, and J. D. Plummer, "Electrical deactivation of arsenic as a source of point defects," Appl. Phys. Lett., vol. 65, no. 5, pp. 578-580, 1994.
4. P. M. Rousseau, P. B. Griffin, W. T. Fang, and J. D. Plummer, "Enhanced diffusion by arsenic deactivation, a time, temperature and concentration study," J. Appl. Phys., to be published.
5. H. Shibayama, H. Masaki, and H Hashimoto. "Anomalous diffusion of arsenic in silicon during low temperature heat treatment," Appl. Phys. Lett., vol. 27, no. 4, pp. 230-231, 1975.
6. H. Shibayama, H. Masaki, H. Ishikawa, and H Hashimoto, "Emitter dip effect by low temperature heat-treatment of arsenic-diffused layer," J. Electrochem. Soc., vol. 123, no. 5, pp. 742-747, 1976.
7. R. Subrahmanyan, M. Orlowski, and A.R. Sitaram, "Confirmation of a vacancy role in the electrical activation and deactivation of arsenic using a point-defect injection experiment," in Process Physics and Modeling in Semiconductor Technology, Electrochem. Soc. Proc., vol. 93, no. 6, 1993, pp. 120-129.
8. A. Parasini, A. Bourret, A. Armigliato, M. Servidori, S. Solmi, R. Fabbri, J. R. Regnard, and J. !.. Alain, "Electrical activity and structural evolution correlations in laser and thermally annealed As-implanted Si specimens," J. Appl. Phys., vol. 67, no. 5, pp. 2320-2332, 1990.
9. C. Brizard, J. R. Regnard, J. L. Allain, A. Bourret, M. Dubus, A. Armigliato, and A. Parisini, "Backscattering spectroraetry and ion channeling studies of heavily implanted As+ in silicon," J. Appl. Phys., vol. 75, no. 1, pp. 126-133, 1994.
10. H. Bauer, P. Pichler and H. Ryssel, "Dynamic behavior of arsenic clusters in silicon," in Proc. 24th European Solid State Device Res. Conf., 19, pp. 93-96.
11. S. Lum'ng, P. M. Rousseau, P. B, Griffin, P. G. Carey and J. D. Plummer, "Kinetics of high concentration arsenic deactivation at moderate to low temperatures," Tech. Dig. Int. Electron Devices Meet., 19, pp. 45760.
12. J. Goetzlich, "Clustering kinetics of arsenic and phosphorus in laser annealed silicon," in Ion Beam Processes in Advanced Electronic Material and Device Technology, Mat. Res. une. Symp. Proc., vol. 45, 1985, pp. 349-354.
13. R. Subrahmanyan, M. Orlowski, and G. Huffman, "Simulation and expérimentai study of the dynamics of arsenic clustering and precipitation including ramp-up and ramp-down conditions." Tech. Dig. Int. Electron Devices Meet., 19, pp. 749-752.
14. L. J. Borucki, "Evidence and modeling of anomalous low concentration arsenic inactivatiori," Tech. Dig, Int. Electron Devices Meet., 19, pp. 753-756.
15. M. Y. Tsai, F. F. Morehead, J. E. E Baglin, and A. E. Michel, "Shallow junctions by high-dose As implants in Si: experiments and modeling," J. Appl. Phys., vol. 51, no. 6, pp. 3230-3235, 1980.
16. D. Nobili, S. Solmi, A. Parisini, M. Derdour, A. Armigliato and L. Moro, "Precipitation, aggregation, and diffusion in heavily arsenicdoped silicon," Phys. Rev. B, vol. 49, pp. 2477-2483, 1994.
17. P. M. Rousseau, P. B. Griffin, S. C. Kuehne, and J. D. Plummer, "Device implications of enhanced diffusion caused by the electrical deactivation of arsenic", Tech. Dig. Int. Electron Devices Meet., 19, pp. 861-864.
18. D. C. Houghton, C. J. Gibbings, C. G Tuppen, M. H. Lyons, and M. A. G. Halliwell, 77 Solid Films, vol. 183, pp. 171-182,'1989.
19. M. F.. Law, C. S. Rafferty, and R. W. Dutton, "SUPREM-IV users manual," Stanford Electronics Laboratories, 1988.
20. A. N. Larsen, K. K. Larsen, P. E. Andersen, and B. G. Svensson, "Heavy doping effects in the diffusion of group TV and V impurities in silicon." J. Appl. Phys., vol 73, pp. 691-697, 1993.
21. O. Dokumaci, P. Rousseau, S. Luning, V. Krishnamoorthy, K. S. Jones, and M. E. Law, "Transmission electron microscopy analysis of heavily As-doped, laser and thermally annealed layers in silicon," J. Appl. Phys., vol. 78, pp. 828-831, July 1995.
22. D. J. Roth, Robert Y. S. Huang, J. D. Plummer, and R. W. Dutton, "Silicon interstitial absorption during thermal oxidation at 900° C by extended defects formed via silicon implantation," Appl. Phys. Lett., vol. 62, no. 20, pp. 2498-2500, 1993.
23. S. M. Hu, "Nonequilibrium point defects and diffusion in silicon," Mater. Sci. Eng., vol. 13, pp. 105-192, 1994.
24. R. B. Fair, "Concentration profiles of diffused dopants in silicon", in Impurity Doping Processes in Silicon, F. F. Y. Yang, Ed. New York: North-Holland, 1981, p. 426.
25. A. Lietola, R. B Gold, J. F. Gibbons, T. W. Sigmon, P. D. Scovell, and J. M. Young, "Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealing," J. Appl. Phys., vol. 52, no. 1, pp. 230, 1981.