CLUSTERING KINETICS OF ARSENIC AND PHOSPHORUS IN LASER ANNEALED SILICON.

Materials Research Society Symposia Proceedings

Volumn 45, Issue , 1985, Pages 349-354

  Goetzlich, Josef ^a  

^a Fraunhofer Institut fur Festkorpertechnologie   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - ANNEALING; LASER BEAMS - EFFECTS; SEMICONDUCTING SILICON - ION IMPLANTATION;

ARSENIC DOPED LAYERS; CARRIER CONCENTRATION PROFILE; LASER ANNEALING; PHOSPHORUS DOPED LAYERS; SATURATION CONCENTRATION; THERMAL POST-ANNEALING;

SEMICONDUCTOR MATERIALS;

EID: 0022221135     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-45-349     Document Type: Conference Paper

References (18)