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Journal of Applied Physics
Volumn 51, Issue 6, 1980, Pages 3230-3235
Shallow junctions by high-dose As implants in Si: Experiments and modeling
Author keywords

[No Author keywords available]
Indexed keywords

COMPUTER SIMULATION;
EID: 0019021929     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.328078     Document Type: Article
Times cited : (132)
References (21)
  • 20
    • 84951377910 scopus 로고    scopus 로고
    • Except for Ref. 16, the data shown in Fig. 2 are taken from the peak concentrations of electrical carrier concentration profiles for heavily As doped Si. The data from Ref. 18 are taken from the surface resistivity shown in Fig. 4 of Ref. 18 [formula omitted] and converted to carrier concentration at room temperature with the experimental mobility values (Ref. 15).
  • 21
    • 84951377911 scopus 로고    scopus 로고
    • The minor discrepancy (in Figs. 3 and 4) between the simulated carrier concentration profiles and the measured profiles is due to the fact that the spreading resistance methods tend to underestimate the concentration close to the surface and overestimate the concentration close to the junction region. The same discrepancy has been observed between data taken by spreading resistance methods and those by Hall effect methods.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.