Device implications of enhanced diffusion caused by the electrical deactivation of arsenic

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 861-864

  Rousseau, P M ^a   Griffin, P B ^a   Kuehne, S C ^a   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BIPOLAR TRANSISTORS; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRICAL DEACTIVATION; POLYSILICON;

SEMICONDUCTOR DOPING;

EID: 0028746111     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)