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Journal of Applied Physics

Volumn 78, Issue 2, 1995, Pages 828-831

Transmission electron microscopy analysis of heavily As-doped, laser, and thermally annealed layers in silicon

(6) Dokumaci, O a Rousseau, P b Luning, S c Krishnamoorthy, V a Jones, K S a Law, M E a

a UNIVERSITY OF FLORIDA (United States)

b STANFORD UNIVERSITY (United States)

c ADVANCED MICRO DEVICES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; ATOMS; ION IMPLANTATION; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

DEACTIVATION; DISLOCATION DENSITY; INTERSTITIALS;

CRYSTAL DEFECTS;

EID: 0029343755 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.360271 Document Type: Article

Times cited : (17)

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