'Effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs'

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 427-430

  Crowder, S W ^a   Rosseau, P M ^a   Snyder, J P ^a   Scott, J A ^a   Griffin, P B ^a   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DIFFUSION; GATES (TRANSISTOR); INTERFACES (MATERIALS); REACTION KINETICS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

DEEP SUBMICRON BULK; HIGH TEMPERATURE RAPID THERMAL ANNEAL; REVERSE SHORT CHANNEL EFFECT; SOURCE DRAIN PROCESSING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029547927     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)