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Applied Physics Letters

Volumn 65, Issue 5, 1994, Pages 578-580

Electrical deactivation of arsenic as a source of point defects

(3) Rousseau, P M a Griffin, P B a Plummer, J D a

a STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449000099 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.112301 Document Type: Article

Times cited : (55)

References (22)

1
- 21544458253
- (1980) Appl. Phys. Lett , vol.36 , pp. 765
- Lietola, A.¹ Gibbons, J.F.² Sigmon, T.W.³

2
- 0019476720
- (1981) J. Appl. Phys , vol.52 , pp. 230
- Lietola, A.¹ Gold, R.B.² Gibbons, J.F.³ Sigmon, T.W.⁴ Scovell, P.D.⁵ Young, J.M.⁶

3
- 0002668513
- (Materials Research Society, Pittsburgh, PA)
- (1985) Ion Beam Processes in Advanced Electronic Material and Device Technology , pp. 349
- Goetzlich, J.¹ Appleton, B.R.² H, F.³

4
- 84951903321
- International Electron Devices Meeting, 1992 (unpublished)
- Luning, S.¹ Rousseau, P.M.² Griffin, P.B.³ Carey, P.G.⁴ Plummer, J.D.⁵

5
- 0346350170
- Electrochemical Society Proceedings, No. 93, (The Electrochemical Society, Pennington, NJ)
- (1993) Process Physics and Modeling in Semiconductor Technology , pp. 130
- Rousseau, P.M.¹ Srinivasan, G.R.² Taniguchi, K.³ Griffin, P.B.⁴ Carey, P.G.⁵ Plummer, J.D.⁶

6
- 0015099442
- (1971) J. Appl. Phys , vol.42 , pp. 3195
- Schwenker, R.O.¹ Pan, E.S.² Lever, R.F.³

7
- 0015563867
- (1973) J. Appl. Phys , vol.44 , pp. 273
- Fair, R.B.¹ Weber, G.R.²

8
- 0000711874
- (1988) Phys. Rev. Lett , vol.61 , pp. 1282
- Pandey, K.C.¹ Erbil, A.² Cargill, G.S.³ Boehme, R.F.⁴ Vanderbilt, D.⁵

9
- 0020735677
- (1982) J. Electrochem. Soc , vol.130 , pp. 922
- Nobili, D.¹ Carabelas, A.² Celotti, G.³ Solmi, S.⁴

10
- 11744366674
- (1985) J. Electrochem. Soc , vol.132 , pp. 2727
- Angelucci, R.¹ Celotti, G.² Nobili, D.³ Solmi, S.⁴

11
- 0022955561
- (1986) J. Electrochem. Soc , vol.133 , pp. 2560
- Armigliato, R.¹ Nobili, D.² Solmi, S.³ Bourret, A.⁴ Werner, P.⁵

12
- 84951895864
- International Electron Devices Meeting, 1990 (unpublished)
- Subrahmanyan, R.¹ Orlowski, M.² Huffman, G.³

13
- 84951898062
- International Electron Devices Meeting, 1990 (unpublished)
- Borucki, L.J.¹

14
- 0019021929
- (1980) J. Appl. Phys , vol.51 , pp. 3230
- Tsai, M.Y.¹ Morehead, F.F.² Baglin, J.E.E.³ Michel, A.E.⁴

15
- 84951896576
- (1990) J. Appl. Phys , vol.67 , pp. 2320
- Allain, J.L.¹ Regnard, J.R.² Bourret, A.³ Parisini, A.⁴ Armigliato, A.⁵ Tourillon, G.⁶ Parasini, S.A.⁷ Bourret, A.⁸ Armigliato, A.⁹ Servidori, M.¹⁰ Solmi, S.¹¹ Fabbri, R.¹² Regnard, J.R.¹³ Alain, J.L.¹⁴

16
- 0142234170
- (1994) J. Appl. Phys , vol.75 , pp. 126
- Brizard, C.¹ Regnard, J.R.² Allain, J.L.³ Bourret, A.⁴ Dubus, M.⁵ Armigliato, A.⁶ Parisini, A.⁷

17
- 84951880126
- Electrochemical Society Proceedings, No. 93, (The Electrochemical Society, Pennington, NJ)
- (1993) Process Physics and Modeling in Semiconductor Technology , pp. 120
- Subrahmanyan, R.¹ Srinivasan, G.R.² Taniguchi, K.³ Orlowski, M.⁴ Sitaram, A.R.⁵

18
- 0024088345
- (1988) IEEE Electron Device Lett , vol.9 , pp. 542
- Carey, P.G.¹ Weiner, K.H.² Sigmon, T.W.³

19
- 45249128047
- (1989) Thin Solid Films , vol.183 , pp. 171
- Houghton, D.C.¹ Gibbings, C.J.² Tuppen, C.G.³ Lyons, M.H.⁴ Halliwell, M.A.G.⁵

20
- 0025247636
- (1990) J. Electrochem. Soc , vol.137 , pp. 318
- Hirota, S.¹ Miyake, M.² Nakayama, S.³ Arai, E.⁴ Murota, J.⁵

21
- 0041607355
- (1993) Appl. Phys. Lett , vol.62 , pp. 2498
- Roth, D.¹ Huang, R.² Plummer, J.³ Dutton, R.⁴

22
- 0026118556
- (1991) J. Electrochem. Soc , vol.138 , pp. 857
- Derdour, M.¹ Nobili, D.² Solmi, S.³

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