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Journal of Applied Physics

Volumn 52, Issue 1, 1981, Pages 230-232

Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealing

(6) Lietoila, A a Gold, R B a Gibbons, J F a Sigmon, T W a Scovell, P D b Young, J M b

a STANFORD UNIVERSITY (United States)

b Standard Telecommunication Laboratories Ltd (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0019476720 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.328482 Document Type: Article

Times cited : (31)

References (12)

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3
- 21544458253
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- Lietoila, A.¹ Gibbons, J.F.² Sigmon, T.W.³

4
- 0018324783
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5
- 0004020231
- 2nd ed. (Clarendon, Oxford)
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- Crank, J.¹

6
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- See, e.g.
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- Johansson, N.G.E.¹ Mayer, J.W.² Marsh, O.J.³

7
- 84951153244
- Backscattering Spectrometry. (Academic, New York)
- (1978)
- Chu, W.K.¹ Mayer, J.W.² Nicolet, M.A.³

8
- 0041552164
- (1976) J. Electrochem. Soc , vol.123 , pp. 1404
- Barber, H.D.¹ Lo, H.B.² Jones, J.E.³

9
- 84951151477
- (unpublished).
- Regolini, J.L.¹

10
- 0017545298
- (1977) J. Appl. Phys , vol.48 , pp. 4234
- Csepregi, L.¹ Kennedy, E.F.² Callagher, T.J.³ Mayer, J.W.⁴ Sigmon, T.W.⁵

11
- 84950987069
- (The Electrochemical Society, Princeton)
- (1980) Laser and Electron Beam Processing of Electronic Materials, Ecs Proc. 80-1 , pp. 361
- Chu, W.K.¹

12
- 84951174199
- (The Electrochemical Society, Princeton)
- (1980) Laser and Electron Beam Processing of Electronic Materials, ECS Proc. 80-1 , pp. 270
- Rimini, E.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.