IMPACT OF ARSENIC DEACTIVATION IN POLYCRYSTALLINE SILICON AND AT POLYSILICON-MONOSILICON INTERFACES ON CONTACT RESISTANCE

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 835-838

  Perera, Asanga H ^a   Taylor, William J ^a   Orlowski, Marius ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CONTACT RESISTANCE; POLYCRYSTALLINE MATERIALS; SOLID STATE DEVICES; ANNEALING; BIPOLAR TRANSISTORS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS);

ARSENIC DEACTIVATION; BIPOLAR CHARACTERISTICS; CHARACTERISTIC GRAIN; CONDITION; DEVICE PERFORMANCE; GRAINSIZE; INTERFACIAL OXIDES; MATERIAL CHARACTERISTICS; REVERSIBLE PROCESS; SILICON INTERFACE;

POLYSILICON; RANDOM ACCESS STORAGE;

ARSENIC DEACTIVATION; CONTACT RESISTANCE; POLYCRYSTALLINE SILICON;

EID: 0027879126     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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