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Materials Science and Engineering R

Volumn 13, Issue 3-4, 1994, Pages 105-192

Nonequilibrium point defects and diffusion in silicon

a IBM RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; PRECIPITATION (CHEMICAL); PROCESS CONTROL; THERMOOXIDATION;

DOPANT DIFFUSION; NONEQUILIBRIUM POINT DEFECTS; PLASMA TREATMENT; SILICIDATION; STACKING FAULTS; THERMAL NITRIDATION;

SEMICONDUCTING SILICON;

EID: 0028523288 PISSN: 0927796X EISSN: None Source Type: Journal
DOI: 10.1016/0927-796X(94)90009-4 Document Type: Article

Times cited : (86)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.