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Volumn 123, Issue 5, 1976, Pages 742-747

Emitter Dip Effect by Low Temperature Heat-Treatment of Arsenic-Diffused Layer

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

EID: 0016951185     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2132919     Document Type: Article
Times cited : (12)

References (24)
  • 3
    • 84975443695 scopus 로고
    • Abstract 408, Proceedings of the 5th Conference International) on Solid State Devices, Tokyo (1973).
    • N. Miyamoto, E. Kuroda, and S. Yoshida, Abstract 408, Proceedings of the 5th Conference (1973 International) on Solid State Devices, Tokyo (1973).
    • (1973)
    • Miyamoto, N.1    Kuroda, E.2    Yoshida, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.