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Journal of Applied Physics

Volumn 75, Issue 1, 1994, Pages 126-133

Backscattering spectrometry and ion channeling studies of heavily implanted As+ in silicon

(7) Brizard, C a Regnard, J R a Allain, J L a Bourret, A a Dubus, M a Armigliato, A b Parisini, A b

a CEA GRENOBLE (France)

b CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142234170 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.355899 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.