Silicon interstitial absorption during thermal oxidation at 900°C by extended defects formed via silicon implantation

Applied Physics Letters

Volumn 62, Issue 20, 1993, Pages 2498-2500

  Roth, David J ^a   Huang, Robert Y S ^a   Plummer, James D ^a   Dutton, Robert W ^a  

^a STANFORD UNIVERSITY   (United States)

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Indexed keywords

EID: 0041607355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109331     Document Type: Article

References (9)