SPICE modelling of impact ionisation effects in silicon bipolar transistors

IEE Proceedings: Circuits, Devices and Systems

Volumn 143, Issue 1, 1996, Pages 33-40

  Verzellesi, G ^a   Dal Fabbro, A ^a   Vendrame, L ^a   Zabotto, E ^b   Zanini, A ^b   Zanoni, E ^c   Pavan, P ^c   Chantre, A ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c ORANGE LABS   (France)

Author keywords

Impact ionisation effects; Silicon bipolar transistors; SPICE modelling

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON;

IMPACT IONIZATION EFFECTS; REVERSE BASE CURRENT; SOFTWARE PACKAGE SPICE;

BIPOLAR TRANSISTORS;

EID: 0030086993     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19960144     Document Type: Article

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