Der einfluss des basisbahnwiderstandes und der ladungsträgermultiplikation auf das ausgangskennlinienfeld von planartransistoren

Solid State Electronics

Volumn 15, Issue 5, 1972, Pages 481-482

  Rein, H M ^a   Schad, T ^a   Zuhlke R ^a  

^a AEG   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICAL-SOLID STATE;

PLANAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0015346596     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(72)90150-5     Document Type: Article

References (26)

1. Edge injection and pinch-in effect of transistors with cylindrical geometry
2. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
3. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
4. Multiplication in collector junctions of silicon n-p-n and p-n-p transistors
5. Current mode second breakdown in epitaxial planar transistors
6. Properties of avalanche injection and its application to fast pulse generation and switching
7. Einschnüreffekt bei Transistoren mit Streifengeometrie (Pinch-in effect in transistors with emitter-stripe geometry)