63-75 GHz fT SiGe-base heterojunction bipolar technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 49-50

  Patton, G L ^a   Comfort, J H ^a   Meyerson, B S ^a   Crabbe E F ^a   Scilla, G J ^a   De Fresart E ^a   Stork, J M C ^a   Sun, J Y C ^a   Harame, D L ^a   Burghartz, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TECHNOLOGY; COMPOUND SEMICONDUCTORS; GAAS; PERFORMANCE LEVEL; SI-GE HETEROJUNCTION; SILICON BIPOLAR;

GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; MICROWAVE DEVICES; SEMICONDUCTING SILICON COMPOUNDS--MICROWAVES;

TECHNOLOGY; TRANSISTORS, BIPOLAR;

DIGEST OF PAPER; SILICON BIPOLAR DEVICES;

EID: 0025621993     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111002     Document Type: Conference Paper

References (7)

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5. D.D. Tang, et al., IEEE EDL, 67 (1989).
6. P.F. Lu, et al., IEEE Trans. Elect. Dev., 1182 (1989).
7. P.J. Wijnen, et al., BCTM Tech. Dig., 70 (1987).