Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions

Solid State Electronics

Volumn 34, Issue 3, 1991, Pages 301-308

  Rein, H M ^a   Schroter M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION - APPLICATIONS; ELECTRIC MEASUREMENTS - RESISTANCE; MATHEMATICAL TECHNIQUES - DIFFERENTIAL EQUATIONS;

BIPOLAR TRANSISTOR TETRODE; EMITTER STRIPES; FORWARD BIAS CONDITIONS; INTERNAL BASE SHEET RESISTANCE;

TRANSISTORS, BIPOLAR;

EID: 0026123785     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90188-5     Document Type: Article

References (20)

1. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
2. Measurement of the low-current base and emitter resistances of bipolar transistors
3. Method for determining the emitter and base series resistances of bipolar transistors
4. Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems
5. Modeling of bipolar transistor using integral charge-control model with application to third-order distortion studies
6. A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results
7. A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model
8. A simple method for separation of the internal and external (peripheral) currents of bipolar transistors
9. Lateral encroachment of extrinsic-base dopant in submicrometer bipolar transistors
10. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
11. Proper choice of the measuring frequency for determining fT of bipolar transistors