Voltage- and Current-Dependent Model for the Base Resistance of Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 35, Issue 10, 1988, Pages 1696-1699

  Hebert, Francois ^a   Roulston, David J ^b  

^a Avantek Inc   (United States)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION;

BASE RESISTANCE; BIPOLE PROGRAM; EARLY EFFECT; KIRK EFFECT; WATAND CIRCUIT SIMULATOR;

TRANSISTORS, BIPOLAR;

EID: 0024091060     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.7376     Document Type: Article

References (10)

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8. D. J. Roulston, “Discrete and integrated bipolar device analysis using the BIPOLE fast computer program,” in Proc. IEEE Custom Integrated Circuits Conf. (Rochester, NY, May 1980), pp. 2–6.
9. J. W. Slotboom, “The pn product in silicon,” Solid-State Electron., vol. 20, pp. 279–283, 1977.
10. I. Hajj, K. Singhal, J. Vlach, and P. Bryant, “WATAND—A program for the analysis and design of linear and piecewise linear network,” in Proc. 16th Midwestern Symp. Circuit Theory (Waterloo, Ont., Canada), 1973.