메뉴 건너뛰기




Volumn 37, Issue 1, 1990, Pages 202-209

An Intrinsic Base Resistance Model for Low and High Currents

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES--JUNCTIONS;

EID: 0025208574     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43817     Document Type: Article
Times cited : (12)

References (13)
  • 1
    • 0001083140 scopus 로고
    • The effects of distributed base potential on emittercurrent injection density and effective base resistance for stripe transistor geometries
    • J. R. Hauser, “The effects of distributed base potential on emittercurrent injection density and effective base resistance for stripe transistor geometries,” IEEE Trans. Electron Devices, vol. ED-11, p. 238, 1964.
    • (1964) IEEE Trans. Electron Devices , vol.ED-11 , pp. 238
    • Hauser, J.R.1
  • 2
    • 0023542304 scopus 로고
    • A quasi-3-D intrinsic base resistance RBIsimulator for non-walled emitter transistors
    • presented at the, Sept.21–22
    • J. Luo and S. Graham, “A quasi-3-D intrinsic base resistance RBIsimulator for non-walled emitter transistors,” presented at the IEEE Bipolar Circuits and Technology Meeting (Minneapolis, MN), Sept. 21–22, 1987.
    • (1987) IEEE Bipolar Circuits and Technology Meeting (Minneapolis, MN)
    • Luo, J.1    Graham, S.2
  • 3
    • 0023962893 scopus 로고
    • Base resistance of bipolar transistors from layout details including two-dimensional effects at low currents and low frequencies
    • F. Hebert and D. J. Roulston, “Base resistance of bipolar transistors from layout details including two-dimensional effects at low currents and low frequencies,” Solid-State Electron., vol. 31, no. 2, pp. 283–290, 1988.
    • (1988) Solid-State Electron. , vol.31 , Issue.2 , pp. 283-290
    • Hebert, F.1    Roulston, D.J.2
  • 4
    • 0022665462 scopus 로고
    • Power dissipation calculation of the base spreading and contact resistance of the base spreading and contact resistance of low currents and low frequencies
    • Feb.
    • E. A. Valsamakis, “Power dissipation calculation of the base spreading and contact resistance of the base spreading and contact resistance of low currents and low frequencies,” IEEE Trans. Electron Devices, vol. ED-33, no. 2, pp. 1939–1946, Feb. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.2 , pp. 1939-1946
    • Valsamakis, E.A.1
  • 5
    • 0021459462 scopus 로고
    • A simple method for separation of the internal and external (peripheral) currents of bipolar transistors
    • M. Rein, “A simple method for separation of the internal and external (peripheral) currents of bipolar transistors,” Solid-State Electron., vol. 27, no. 7, pp. 625–631, 1984.
    • (1984) Solid-State Electron. , vol.27 , Issue.7 , pp. 625-631
    • Rein, M.1
  • 7
    • 0024480519 scopus 로고
    • A charge-based large-signal bipolar transistor model for device and circuit simulation
    • Jan.
    • H. Jeong and J. G. Fossum, “A charge-based large-signal bipolar transistor model for device and circuit simulation,” IEEE Trans. Electron Devices, vol. ED-36, no. 1, pp. 124-131, Jan. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.ED-36 , Issue.1 , pp. 124-131
    • Jeong, H.1    Fossum, J.G.2
  • 8
    • 84918145185 scopus 로고
    • Hams Semiconductor Corp., Melbourne, FL, Jan.
    • SLICE Manual, Rev. 4.08. Hams Semiconductor Corp., Melbourne, FL, Jan. 1984.
    • (1984) SLICE Manual, Rev. 4.08
  • 9
    • 0023326943 scopus 로고
    • Physical modeling of high-current transients for bipolar transistor circuit simulation
    • Apr.
    • H. Jeong and J. G. Fossum, “Physical modeling of high-current transients for bipolar transistor circuit simulation,” IEEE Trans. Electron Devices, vol. ED-34, no. 4, Apr. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.4
    • Jeong, H.1    Fossum, J.G.2
  • 10
    • 0022152069 scopus 로고
    • New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes
    • Nov.
    • H. C. de Graaff and W. J. Kloosterman, ”New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2415-2419, Nov. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2415-2419
    • de Graaff, H.C.1    Kloosterman, W.J.2
  • 12
    • 0004301021 scopus 로고
    • Stanford Electronics Lab., Dep. Electrical Engineering, Stanford University, Stanford, CA
    • M. R. Pinto, C. S. Rafferty, and R. W. Dutton, PISCES-II User's Manual, Stanford Electronics Lab., Dep. Electrical Engineering, Stanford University, Stanford, CA, 1984.
    • (1984) PISCES-II User's Manual
    • Pinto, M.R.1    Rafferty, C.S.2    Dutton, R.W.3
  • 13
    • 84941487725 scopus 로고    scopus 로고
    • unpublished
    • M. Jo, unpublished.
    • Jo, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.