Collector-Base Junction Avalanche Effects in Advanced Double-Poly Self-Aligned Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 6, 1989, Pages 1182-1188

  Lu, Pong Fei ^a   Chen, Tze Chiang ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS;

AVALANCHE MULTIPLICATION; BASE CURRENT REVERSAL; COLLECTOR DOPING PROFILE; SELF ALIGNED BIPOLAR DEVICES;

TRANSISTORS, BIPOLAR;

EID: 0024683097     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.24366     Document Type: Article

References (13)

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