Modeling of Narrow-Base Bipolar Transistors Including Variable-Base-Charge and Avalanche Effects

IEEE Transactions on Electron Devices

Volumn 34, Issue 11, 1987, Pages 2323-2328

  Hébert, François ^a   Roulston, David J ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143051849     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23239     Document Type: Article

References (15)

1. J. M. Early, “Effects of space-charge layer widening in junction transistors,” Proc. IRE, vol. 40, pp. 1401–1406, Nov. 1952.
2. L. W. Nagel, “SPICE2, a computer program to simulate semiconductor circuits,” Electron. Res. Lab., Univ. of Calif., Berkeley, May 1975.
3. I. Hajj, K. Singhal, J. Vlach, and P. Bryant, “WATAND—A program for the analysis and design of linear and piecewise linear networks,” in Proc. 16th Midwestern Symp. Circuit Theory (Waterloo, Ont., Canada), 1973.
4. M. K. Gummel and H. C. Poon, “An integral charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 827–852, May 1970.
5. D. Scott and D. J. Roulston, “Ic–Vce characteristics of double diffused bipolar transistors under low level injection,” Solid-State Electron., vol. 23, pp. 201–207, 1980.
6. U. Zugelder and D. J. Roulston, “Analytic results for the base region of bipolar transistors based on computer simulations,” Solid-State Electron., to be published, 1987.
7. I. Getreu, “Modeling the bipolar transistor,” Tektronix Inc., Beaverton, OR, 1979.
8. R. W. Dutton, “Bipolar transistor modeling of avalanche generation for computer circuit simulation,” IEEE Trans. Electron Devices, vol. ED-22, no. 6, pp. 334–338, June 1975.
9. F. Severson, “A new LVce0 SPICE model,” in Proc. 1986 IEEE Bipolar Circuits and Tech. Meet. (BCTM) (Minneapolis, MN), pp. 77–78, Sept. 1986.
10. H. J. Strayer, D. J. Roulston, and P. R. Bryant, “DC solution speed in piecewise linear network analysis programs,” Electron. Lett., vol. 22, no. 3, pp. 165–167, Jan. 30, 1986.
11. H. K. Gummel, “Measurement of the number of impurities in the base layer of a transistor,” Proc. IRE, vol. 49, p. 834, Apr. 1961.
12. D. J. Roulston, “Discrete and integrated bipolar device analysis using the BIPOLE fast computer program,” in Proc. 1980 IEEE Custom Integrated Circuits Conf. (Rochester, NY), pp. 229–232, May 1980.
13. E. S. Yang, Fundamentals of Semiconductor Devices. NewYork: McGraw-Hill, 1978, ch. 4.
14. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1977, ch. 1, pp. 26–27.
15. F. Hébert and D. J. Roulston, “High frequency performance of non-conventional-geometry conventional-geometry bipolar transistor,” Solid-State Electron., vol. 29, no. 12, pp. 1239–1241, Dec. 1986.